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t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 1 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? military radar ? civilian radar ? professional and military radio communications ? test instrumentation ? wideband or narrowband amplifiers ? jammers product features functional block diagram ? frequency: dc to 3.5 ghz ? output power (p3db): 37 w at 3.5 ghz ? linear gain: >16 db at 3.5 ghz ? operating voltage: 32 v ? low thermal resistance package general description pin configuration the triquint t1g4003532-fl is a 37 w (p 3db ) discrete gan on sic hemt which operates from dc to 3.5 ghz. the device is constructed with triquint?s proven 0.25 m process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request . pin # symbol 1 vd/rf out 2 vg/rf in flange source ordering information material no. part no. description eccn 1092933 t1g4003532-fl packaged part: flanged ear99 1095349 t1g4003532- fs/fl-evb1 2.7-3.5 ghz eval. board ear99
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 2 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain to gate voltage, vd ? vg 40 v drain voltage, vd +40 v gate voltage, vg -8 to 0 v drain current, id 4.5 a gate current, ig -7.5 to 7.5 ma power dissipation, pdiss 40 w rf input power, cw, t = 25 o c 38.75 dbm channel temperature, tch 275 o c mounting temperature (30 sec) 320 o c storage temperature -40 to 150 o c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation o f the device at these conditions is not implied. refer to the median life time plot on pg. 3 for additional information regarding channel temperature. recommended operating conditions parameter min typical max units vd 32 v idq 150 ma id (peak current) 2400 ma vg -3.9 v channel temperature, tch 200 o c power dissipation, pdiss (cw) 24.5 w power dissipation, pdiss (pulse) 35 w electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications recommended operating conditions apply unless other wise specified: t a = 25 c, vd = 32 v, idq = 150 ma, vg = -3.9 v rf characteristics characteristics symbol min typ max units load pull performance at 1.0 ghz (v ds = 32 v, i dq = 150 ma; pulse: 100s, 20%) linear gain g lin 23.0 db output power at 3 db gain compression p 3db 40.1 w drain efficiency at 3 db gain compression de 3db 73.0 % power-added efficiency at 3 db gain compression pae 3db 72.5 % gain at 3 db compression g 3db 20.0 db load pull performance at 3.5 ghz (v ds = 32 v, i dq = 150 ma; pulse: 100s, 20%) linear gain g lin 18.8 db output power at 3 db gain compression p 3db 42.6 w drain efficiency at 3 db gain compression de 3db 62.1 % power-added efficiency at 3 db gain compression pae 3db 60.5 % gain at 3 db compression g 3db 15.8 db performance at 3.5 ghz in the 2.7 to 3.5 ghz eval. board (v ds = 32 v, i dq = 150 ma; pulse: 100s, 20%) linear gain g lin 16.0 17.0 db output power at 3 db gain compression p 3db 33.0 37.0 w drain efficiency at 3 db gain compression de 3db 53.0 57.0 % power added efficiency at 3 db compression pae 3db 48.0 54.0 % gain at 3 db compression g 3db 13.0 14.0 db narrow band performance at 3.50 ghz (v ds = 32 v, i dq = 150 ma, cw at p1db) impedance mismatch ruggedness vswr 10:1
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 3 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information test conditions t ch (c) jc (c/w) dc at 85 c 200 4.7 note: thermal resistance, jc , measured to bottom of package
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 4 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? load pull smith chart rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, th ey are the impedances presented to the device via a n rf circuit or load-pull system. the impedances list ed follow an optimized trajectory to maintain high power and high efficiency. test conditions: v ds = 32 v, i dq = 150 ma test signal: pulse width = 100 sec, duty cycle = 20% load-pull data at 1.0 ghz load-pull data at 2. 0 ghz load-pull data at 3.1 ghz load-pull data at 3 .5 ghz
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 5 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) performance is based on compromised impedance poin t and measured at dut reference plane. 35 37 39 41 43 45 47 18 19 20 21 22 23 24 25 26 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4003532-fl gain dreff. and pae vs. pout 1000 mhz, 100us 20%, vds = 32v, idq = 150 ma gain dreff. pae z s = 2.67 + j3.64 z l = 9.98 + j4.78 35 37 39 41 43 45 47 12 13 14 15 16 17 18 19 20 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4003532-fl gain dreff. and pae vs. pout 2000 mhz, 100us 20%, vds = 32v, idq = 150 ma gain dreff. pae z s = 12.40 - j14.04 z l = 6.85 + j2.67 35 37 39 41 43 45 47 12 13 14 15 16 17 18 19 20 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4003532-fl gain dreff. and pae vs. pout 3100 mhz, 100us 20%, vds = 32v, idq = 150 ma gain dreff. pae z s = 11.09 - j9.69 z l = 10.06 + j3.58 35 37 39 41 43 45 47 12 13 14 15 16 17 18 19 20 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 35 37 39 41 43 45 47 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4003532-fl gain dreff. and pae vs. pout 3500 mhz, 100us 20%, vds = 32v, idq = 150 ma gain dreff. pae z s = 9.66 + j0.07 z l = 7.66 + j0.57
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 6 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? performance over temperature: gain, efficiency and output power performance measured in triquint?s 2.7 ghz to 3.5 g hz evaluation board at 3 db compression . t1g4003532-fl gain vs. temp . t1g4003532- fl power vs. temp. v ds = 32 v, i dq = 150 ma; pulse: 100 s, 20% v ds = 32 v, i dq = 150 ma; pulse: 100 s, 20% t1g4003532- fl drain eff. vs. temp . t1g4003532- fl pae vs. temp. v ds = 32 v, i dq = 150 ma; pulse: 100 s, 20% v ds = 32 v, i dq = 150 ma; pulse: 100 s, 20%
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 7 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? evaluation board performance: 2.7 to 3.5 ghz output power and gain at 3 db compression v ds = 32 v, i dq = 150 ma; pulse: 100 sec, 20% drain efficiency and power added efficiency at 3 db compression v ds = 32 v, i dq = 150 ma; pulse: 100 sec, 20% 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 15.00 20.00 25.00 30.00 35.00 40.00 45.00 50.00 55.00 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 gain (db) output power (w) frequency (ghz) power (w) gain (db) 35 40 45 50 55 60 65 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 efficiency (%) frequency (ghz) drain eff. (%) pae (%)
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 8 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit bias - up procedure bias - down pr ocedure vg set to -5.0v turn off rf signal vd set to 32 v turn off vd and wait 1 second to allow drain capacitor dissipation adjust vg more positive until quiescent id is 150 m a. this will be ~ vg = -3.9 v typical turn off vg apply rf signal
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 9 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications information evaluation board layout top rf layer is 0.020? thick rogers ro4350b, r = 3.48. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. bill of materials reference des. value qty manufacturer part number c1, c2, c3, c14 10 pf 4 atc 600s100ft250xt c6, c12 0.1 uf 2 kemet c1206c104k1ractu c7, c13 1.0 uf 2 avx 18121c105kat2a c8 22 uf 1 vishay sprague 293d226x9035e2te3 c15 470 uf 1 illinois capacitor 477kxm035m c16 2400 pf 1 dielectric labs c08bl242x_5sn_x0t l1, l2 8.0 nh 2 coilcraft a03tjlb r1 12.1 ohms 1 vishay dale crcw120612r1fkea r2 1000 ohms 1 vishay dale crcw12061k00fkea r3 97.6 ohms 1 vishay dale crcw060397r6fkea
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 10 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? pin description the t1g4003532-fl will be marked with the ?3532? de signator and a lot code marked below the part desig nator. the ?yy? represents the last two digits of the cale ndar year the part was manufactured, the ?ww? is th e work week of the assembly lot start, the ?mxxx? is the produc tion lot number, and the ?zzz? is an auto-generated serial number. pin sy mbol description 1 vd/ rf out drain voltage/ rf output matched to 50 ohms; see ap plication circuit on page 9 as an example. 2 vg/rf in gate voltage/ rf input matched to 50 ohms; see appl ication circuit on page 9 as an example 3 flange source connected to ground; see application circuit on page 9 as an example.
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 11 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information package information and dimensions all dimensions are in millimeters. this package is lead-free/rohs-compliant. the plati ng material on the leads is niau. it is compatible with both lead-free (maximum 260 c reflow temperature) and t in-lead (maximum 245c reflow temperature) solderin g processes.
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 ? 2012 triquint semiconductor, inc. product compliance inform esd information esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 msl rating level 3 at +260 c convection reflow the part is r ated moisture sensitivity level jedec standard ipc/jedec j -std- 020. eccn us department of commerce ear99 recommended soldering temperature profile 3.5 ghz, gan rf power transistor - 12 of 13 - disclaimer: subject to change without notice connecting the digital world to the global network product compliance inform ation human body model (hbm) jedec standard jesd22 -a114 solderability compatible with the latest version of j lead free solder, 260 c this part is compliant with eu 2002/95 directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free ated moisture sensitivity level 3 at 260c per 020. recommended soldering temperature profile disclaimer: subject to change without notice connecting the digital world to the global network ? compatible with the latest version of j -std-020, compliant with eu 2002/95 /ec rohs directive (restrictions on the use of certain hazardous substances in electrical and this product also has the following attributes: halogen free (chlorine, bromine) ) free
t1g4003532-fl 35w, 32v, dc ? 3.5 ghz, gan rf power transistor data sheet: rev a 10/18/2012 - 13 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding t he information contained herein. triquint assumes no responsibility or liability whatsoever for any of t he information contained herein. triquint assumes no responsibili ty or liability whatsoever for the use of the infor mation contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is ent irely with the user. all information contained her ein is subject to change without notice. customers should obtain and verify the latest relevant information before plac ing orders for triquint products. the information contained herei n or any use of such information does not grant, ex plicitly or implicitly, to any party any patent rights, license s, or any other intellectual property rights, wheth er with regard to such information itself or anything described by su ch information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure would reasonably be expected to cause s evere personal injury or death.

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